99 lines
4.0 KiB
C
99 lines
4.0 KiB
C
#include "VM_Sram.h"
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#include "delay.h"
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u8 Sram_Buf[50000] __attribute__((at(0X68000000)));//测试用数组
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SRAM_HandleTypeDef SRAM_Handler; //SRAM句柄
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//SRAM初始化
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void SRAM_Init(void)
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{
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GPIO_InitTypeDef GPIO_Initure;
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FSMC_NORSRAM_TimingTypeDef FSMC_ReadWriteTim;
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__HAL_RCC_FSMC_CLK_ENABLE(); //使能FSMC时钟
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__HAL_RCC_GPIOD_CLK_ENABLE(); //使能GPIOD时钟
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__HAL_RCC_GPIOE_CLK_ENABLE(); //使能GPIOE时钟
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__HAL_RCC_GPIOF_CLK_ENABLE(); //使能GPIOF时钟
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__HAL_RCC_GPIOG_CLK_ENABLE(); //使能GPIOG时钟
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//PD0,1,4,5,8~15
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GPIO_Initure.Pin=GPIO_PIN_0|GPIO_PIN_1|GPIO_PIN_4|GPIO_PIN_5|GPIO_PIN_8|\
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GPIO_PIN_9|GPIO_PIN_10|GPIO_PIN_11|GPIO_PIN_12|GPIO_PIN_13|\
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GPIO_PIN_14|GPIO_PIN_15;
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GPIO_Initure.Mode=GPIO_MODE_AF_PP; //推挽复用
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GPIO_Initure.Pull=GPIO_PULLUP; //上拉
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GPIO_Initure.Speed=GPIO_SPEED_HIGH; //高速
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GPIO_Initure.Alternate=GPIO_AF12_FSMC; //复用为FSMC
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HAL_GPIO_Init(GPIOD,&GPIO_Initure);
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//PE0,1,7~15
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GPIO_Initure.Pin=GPIO_PIN_0|GPIO_PIN_1|GPIO_PIN_7|GPIO_PIN_8|GPIO_PIN_9|\
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GPIO_PIN_10| GPIO_PIN_11|GPIO_PIN_12|GPIO_PIN_13|GPIO_PIN_14|\
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GPIO_PIN_15;
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HAL_GPIO_Init(GPIOE,&GPIO_Initure);
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//PF0~5,12~15
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GPIO_Initure.Pin=GPIO_PIN_0|GPIO_PIN_1|GPIO_PIN_2|GPIO_PIN_3|GPIO_PIN_4|\
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GPIO_PIN_5|GPIO_PIN_12|GPIO_PIN_13|GPIO_PIN_14|GPIO_PIN_15;
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HAL_GPIO_Init(GPIOF,&GPIO_Initure);
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//PG0~5,10
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GPIO_Initure.Pin=GPIO_PIN_0|GPIO_PIN_1|GPIO_PIN_2|GPIO_PIN_3|GPIO_PIN_4|GPIO_PIN_5|GPIO_PIN_10;
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HAL_GPIO_Init(GPIOG,&GPIO_Initure);
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SRAM_Handler.Instance=FSMC_NORSRAM_DEVICE;
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SRAM_Handler.Extended=FSMC_NORSRAM_EXTENDED_DEVICE;
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SRAM_Handler.Init.NSBank=FSMC_NORSRAM_BANK3; //使用NE3
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SRAM_Handler.Init.DataAddressMux=FSMC_DATA_ADDRESS_MUX_DISABLE; //地址/数据线不复用
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SRAM_Handler.Init.MemoryType=FSMC_MEMORY_TYPE_SRAM; //SRAM
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SRAM_Handler.Init.MemoryDataWidth=FSMC_NORSRAM_MEM_BUS_WIDTH_16; //16位数据宽度
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SRAM_Handler.Init.BurstAccessMode=FSMC_BURST_ACCESS_MODE_DISABLE; //是否使能突发访问,仅对同步突发存储器有效,此处未用到
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SRAM_Handler.Init.WaitSignalPolarity=FSMC_WAIT_SIGNAL_POLARITY_LOW; //等待信号的极性,仅在突发模式访问下有用
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SRAM_Handler.Init.WaitSignalActive=FSMC_WAIT_TIMING_BEFORE_WS; //存储器是在等待周期之前的一个时钟周期还是等待周期期间使能NWAIT
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SRAM_Handler.Init.WriteOperation=FSMC_WRITE_OPERATION_ENABLE; //存储器写使能
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SRAM_Handler.Init.WaitSignal=FSMC_WAIT_SIGNAL_DISABLE; //等待使能位,此处未用到
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SRAM_Handler.Init.ExtendedMode=FSMC_EXTENDED_MODE_DISABLE; //读写使用相同的时序
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SRAM_Handler.Init.AsynchronousWait=FSMC_ASYNCHRONOUS_WAIT_DISABLE; //是否使能同步传输模式下的等待信号,此处未用到
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SRAM_Handler.Init.WriteBurst=FSMC_WRITE_BURST_DISABLE; //禁止突发写
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SRAM_Handler.Init.ContinuousClock=FSMC_CONTINUOUS_CLOCK_SYNC_ASYNC;
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//FMC读时序控制寄存器
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FSMC_ReadWriteTim.AddressSetupTime=0x00; //地址建立时间（ADDSET）为1个HCLK 1/168M=6ns*16=96ns
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FSMC_ReadWriteTim.AddressHoldTime=0x00; //地址保持时间（ADDHLD）模式A未用到
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FSMC_ReadWriteTim.DataSetupTime=0x03; //数据保存时间为8个HCLK =6*1=6ns
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FSMC_ReadWriteTim.BusTurnAroundDuration=0X00;
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FSMC_ReadWriteTim.AccessMode=FSMC_ACCESS_MODE_A;//模式A
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HAL_SRAM_Init(&SRAM_Handler,&FSMC_ReadWriteTim,&FSMC_ReadWriteTim);
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}
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//在指定地址(WriteAddr+Bank1_SRAM3_ADDR)开始,连续写入n个字节.
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//pBuffer:字节指针
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//WriteAddr:要写入的地址
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//n:要写入的字节数
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void FSMC_SRAM_WriteBuffer(u8 *pBuffer,u32 WriteAddr,u32 n)
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{
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for(;n!=0;n--)
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{
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*(vu8*)(Bank1_SRAM3_ADDR+WriteAddr)=*pBuffer;
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WriteAddr++;
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pBuffer++;
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}
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}
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//在指定地址((WriteAddr+Bank1_SRAM3_ADDR))开始,连续读出n个字节.
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//pBuffer:字节指针
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//ReadAddr:要读出的起始地址
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//n:要写入的字节数
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void FSMC_SRAM_ReadBuffer(u8 *pBuffer,u32 ReadAddr,u32 n)
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{
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for(;n!=0;n--)
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{
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*pBuffer++=*(vu8*)(Bank1_SRAM3_ADDR+ReadAddr);
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ReadAddr++;
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}
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}
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